Fenix ofrece capacidades avanzadas de grabado de plasma para industrias que exigen precisión y excelencia en la microfabricación. El grabado de plasma, un proceso clave en la fabricación de semiconductores y productos electrónicos, permite la eliminación precisa de material a nivel microscópico, lo que garantiza patrones intrincados y detalles finos para componentes como microchips, MEMS y otros dispositivos críticos.
Con nuestro equipo de última generación y nuestra experiencia en tecnología de plasma, ofrecemos soluciones de grabado altamente controladas y adaptadas a las necesidades específicas de cada proyecto. Ya sea que se centre en lograr alta precisión, uniformidad o repetibilidad, Fenix garantiza que nuestros procesos de grabado con plasma brinden el rendimiento y la calidad superiores necesarios para aplicaciones de vanguardia. Para las empresas que buscan superar los límites de la innovación, Fenix es el socio en el que puede confiar para obtener soluciones avanzadas de grabado con plasma.
Plasma etching is a material removal process that uses ionized gas (plasma) to selectively etch surfaces in semiconductor fabrication, microelectronics, and MEMS manufacturing. The process allows for precise pattern transfer and microstructuring of materials such as silicon, dielectrics, and metals.
Plasma is a highly energized state of matter consisting of ionized gas particles (electrons, ions, and neutral atoms). It is used in etching, deposition, and surface modification processes in semiconductor manufacturing.
Reactive Ion Etching (RIE) is a dry etching process that combines chemical and physical etching mechanisms using reactive gases and ion bombardment. It enables anisotropic (directional) etching, critical for microelectronics and nanotechnology.
Inductively Coupled Plasma (ICP) is a high-density plasma source generated by an RF-powered inductive coil. It allows for high plasma density and independent control of ion energy, leading to fast, precise, and highly uniform etching.
Capacitive Coupled Plasma (CCP) is a low-density plasma generated between two parallel electrodes using RF power. It is commonly used in low-energy plasma etching and deposition processes, offering gentle etching with reduced substrate damage.
Plasma ashing is a process that uses oxygen or hydrogen plasma to remove organic materials, such as photoresist, from semiconductor wafers. It is widely used in post-lithography cleaning and residue removal.
Plasma power refers to the amount of electrical energy applied to generate and sustain a plasma discharge. It influences plasma density, ion energy, and etching performance in semiconductor processes.
Plasma frequency is the natural oscillation frequency of free electrons in plasma. It determines the interaction of the plasma with RF power and affects ion energy, etching rates, and deposition characteristics.
Gas composition refers to the specific gases used in plasma etching processes, such as SF₆, CF₄, O₂, Cl₂, and Ar. The choice of gases influences etch selectivity, profile control, and material compatibility.
Bias voltage is the electric potential applied to the wafer or substrate during plasma etching, controlling ion bombardment energy. Higher bias voltages result in stronger anisotropic etching, while lower bias reduces surface damage.
Etching uniformity is a measure of how evenly material is removed across a wafer or substrate during plasma etching. Achieving high uniformity is essential for consistent device performance and high manufacturing yield.
Aiken, SC 29801
sales@fenix-mfg.com, Estados Unidos
San Pedro De Macoris
(809) 529-4421, Dominican Republic
Fenix – USA.
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Aiken, SC 29801
Fenix – DR
San Pedro Industrial Free Zone
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